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Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data
INA-03184
Features
* Cascadable 50 Gain Block * Low Noise Figure: 2.6 dB Typical at 1.5 GHz * High Gain: 25 dB Typical at 1.5 GHz * 3 dB Bandwidth: DC to 2.5 GHz * Unconditionally Stable (k>1) * Low Power Dissipation: 10 mA Bias * Low Cost Plastic Package
feedback amplifier housed in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and low noise IF or RF amplification with minimum power consumption. The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz f MAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
84 Plastic Package
Description
The INA-03184 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC)
Typical Biasing Configuration
C bypass1 (Optional) VCC RFC (Optional) Rbias Cblock RF IN 1 2 4 3 Vd = 4.0 V (Nominal) Cblock RF OUT
Note: 1. VSWR can be improved by bypassing a 100-120 bias resistor directly to ground. See AN-S012: Low Noise Amplifiers.
5965-9678E
6-108
INA-03184 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 25 mA 200 mW +13 dBm 150C -65 to 150C Thermal Resistance: jc = 100C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 10 mW/C for TC > 130C.
INA-03184 Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB ISO VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 10 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Reverse Isolation (|S12| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 1.5 GHz f = 0.01 to 2.0 GHz f = 0.01 to 2.0 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 0.1 to 2.0 GHz
Units
dB dB GHz dB
Min.
23.0
Typ.
25.0 0.8 2.5 35 2.0:1 3.0:1[3]
Max.
dB dBm dBm psec V mV/C 3.0
2.6 -2.0 7 210 4.0 + 4 5.0
Notes: 1. The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP). 3. VSWR can be improved by bypassing a 100-200 bias resistor directly to ground. See AN-S012: MagIC Low Noise Amplifiers.
INA-03184 Part Number Ordering Information
Part Number INA-03184-TR1 INA-03184-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag
For more information, see "Tape and Reel Packaging for Semiconductor Devices".
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INA-03184 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 10 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50 4.00
.32 .32 .32 .32 .32 .32 .32 .30 .31 .30 .26 .22 .09 .14 .24 .29
179 176 172 165 158 151 144 135 126 117 102 92 91 160 151 139
25.6 25.6 25.6 2.5 25.4 25.4 25.2 25.2 25.2 25.1 24.9 24.4 22.2 18.9 15.4 12.4
19.14 19.05 19.05 18.78 18.71 18.53 18.18 18.27 18.10 17.92 17.49 16.62 12.88 8.79 5.92 4.18
-3 -7 -14 -29 -43 -57 -72 -86 -102 -117 -135 -153 168 134 108 87
-37.1 -37.1 -37.1 -37.1 -36.5 -36.5 -35.9 -35.9 -35.4 -34.9 -34.4 -34.0 -33.6 -32.8 -32.0 -30.8
.014 .014 .014 .014 .015 .015 .016 .016 .017 .018 .019 .020 .021 .023 .025 .029
3 4 6 10 11 13 21 25 30 38 44 49 57 65 69 81
.55 .57 .55 .53 .51 .51 .50 .50 .49 .48 .45 .40 .26 .22 .26 .28
0 -3 -5 -11 -14 -17 -20 -23 -29 -34 -41 -50 -48 -33 -33 -43
1.48 1.45 1.48 1.53 1.49 1.50 1.46 1.46 1.42 1.38 1.39 1.44 1.87 2.40 3.01 3.52
Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section.
INA-03184 Typical Performance, TA = 25C
(unless otherwise noted)
30 Gain Flat to DC 25 4.0 Id (mA) 15 5.0 25 TC = +85C TC = +25C TC = -25C Gp (dB) 30 f = 0.1-2 GHz 25 f = 3 GHz NF (dB) Gp (dB) 20 3.0 20
20
10
15
2.0
15 5
10 0.1
0.2
0.5
1.0
2.0
1.0 5.0
0 0 2 4 Vd (V) 6 8 10
10 5 10 15 Id (mA) 20 25
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Id = 10 mA.
27 Gp (dB) 26 25 24 P1 dB Gp
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
8
5.0
4 P1 dB (dBm) P1 dB (dBm) 0 -2 -4 NF (dB) Id = 16 mA 0 Id = 10 mA -4 Id = 8 mA
4.0
3.0
Id = 8 mA
NF (dB)
3.0 NF 2.0 -25 +25 +85
-6 2.0 Id = 10 to 16 mA
-8 0.1
0.2
0.5
1.0
2.0
5.0
1.0 0.1
0.2
0.5
1.0
2.0
5.0
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 1.5 GHz, Id = 10 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-110
84 Plastic Package Dimensions
0.51 (0.020) 4 GROUND RF OUTPUT AND DC BIAS 3
1 2
031
2.15 (0.085)
5
RF INPUT
GROUND
0.20 0.050 (0.008 0.002)
1.52 0.25 (0.060 0.010) 5.46 0.25 (0.215 0.010)
0.51 (0.020)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
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